中国物理B(英文版)2024,Vol.33Issue(8) :552-557.DOI:10.1088/1674-1056/ad4cd5

Single crystal growth and transport properties of narrow-bandgap semiconductor RhP2

吴德胜 郑萍 雒建林
中国物理B(英文版)2024,Vol.33Issue(8) :552-557.DOI:10.1088/1674-1056/ad4cd5

Single crystal growth and transport properties of narrow-bandgap semiconductor RhP2

吴德胜 1郑萍 2雒建林2
扫码查看

作者信息

  • 1. Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong),Shenzhen 518045,China
  • 2. Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China
  • 折叠

Abstract

We report the growth of high-quality single crystals of RhP2,and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP2 adopts a monoclinic structure with the cell parameters a=5.7347(10)Å,b=5.7804(11)Å,and c=5.8222(11)Å,space groupP21/c(No.14).The electrical resistivity p(T)measurements indicate that RhP2 exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperature-dependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP2 has a high mobility μe~210 cm2·V-1·s-1 with carrier concentrations ne~3.3×1018 cm-3 at 300 K with a narrow-bandgap feature.The high mobility μe reaches the maximum of approximately 340 cm2·V-1·s-1 with carrier concentrations ne~2 × 1018 cm-3 at 100 K.No magnetic phase transitions are observed from the susceptibility x(T)and specific heat Cp(T)measurements of RhP2.Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.

Key words

single crystal growth/narrow band system/electrical transport/high mobilities

引用本文复制引用

基金项目

National Key Research and Development Program of China(2017YFA0302901)

Strategic Priority Research Program()

Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(XDB33010100)

National Natural Science Foundation of China(12134018)

National Natural Science Foundation of China(11921004)

National Natural Science Foundation of China(11634015)

Foundation of Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area,China(QD2301005)

Postdoctoral Science Foundation of China(2021M693370)

Synergetic Extreme Condition User Facility(SECUF)()

出版年

2024
中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
段落导航相关论文