首页|Single crystal growth and transport properties of narrow-bandgap semiconductor RhP2

Single crystal growth and transport properties of narrow-bandgap semiconductor RhP2

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We report the growth of high-quality single crystals of RhP2,and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP2 adopts a monoclinic structure with the cell parameters a=5.7347(10)Å,b=5.7804(11)Å,and c=5.8222(11)Å,space groupP21/c(No.14).The electrical resistivity p(T)measurements indicate that RhP2 exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperature-dependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP2 has a high mobility μe～210 cm2·V-1·s-1 with carrier concentrations ne～3.3×1018 cm-3 at 300 K with a narrow-bandgap feature.The high mobility μe reaches the maximum of approximately 340 cm2·V-1·s-1 with carrier concentrations ne～2 × 1018 cm-3 at 100 K.No magnetic phase transitions are observed from the susceptibility x(T)and specific heat Cp(T)measurements of RhP2.Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.

single crystal growthnarrow band systemelectrical transporthigh mobilities

吴德胜、郑萍、雒建林

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Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong),Shenzhen 518045,China

Songshan Lake Materials Laboratory,Dongguan 523808,China

National Key Research and Development Program of ChinaStrategic Priority Research ProgramKey Research Program of Frontier Sciences of the Chinese Academy of SciencesNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaFoundation of Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area,ChinaPostdoctoral Science Foundation of ChinaSynergetic Extreme Condition User Facility(SECUF)

2017YFA0302901XDB33010100121340181192100411634015QD23010052021M693370

2024

10.1088/1674-1056/ad4cd5

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(8)