首页|Atomically self-healing of structural defects in monolayer WSe2

Atomically self-healing of structural defects in monolayer WSe2

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Minimizing disorder and defects is crucial for realizing the full potential of two-dimensional transition metal dichalco-genides(TMDs)materials and improving device performance to desired properties.However,the methods in defect control currently face challenges with overly large operational areas and a lack of precision in targeting specific defects.Therefore,we propose a new method for the precise and universal defect healing of TMD materials,integrating real-time imaging with scanning transmission electron microscopy(STEM).This method employs electron beam irradiation to stimulate the diffu-sion migration of surface-adsorbed adatoms on TMD materials grown by low-temperature molecular beam epitaxy(MBE),and heal defects within the diffusion range.This approach covers defect repairs ranging from zero-dimensional vacancy defects to two-dimensional grain orientation alignment,demonstrating its universality in terms of the types of samples and defects.These findings offer insights into the use of atomic-level focused electron beams at appropriate voltages in STEM for defect healing,providing valuable experience for achieving atomic-level precise fabrication of TMD materials.

scanning transmission electron microscopy(STEM)atom manipulationnanoscale materials and structures:fabrication and characterizationnew materials:theorydesignfabrication

李康舒、李俊贤、韩小藏、周武、赵晓续

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School of Materials Science and Engineering Peking University,Beijing 100871,China

School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China

School of Materials Science and Engineering,Peking University,Beijing 100871,China

AI for Science Institute,Beijing 100084,China

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Beijing Natural Science FoundationBeijing Natural Science FoundationFundamental Research Funds for the Central UniversitiesNational Natural Science Foundation of ChinaElectron Microscopy Laboratory of Peking University,China

JQ24010Z22002052273279

2024

10.1088/1674-1056/ad641f

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(9)