首页|Multiphase cooperation for multilevel strain accommodation in a single-crystalline BiFeO3 thin film

Multiphase cooperation for multilevel strain accommodation in a single-crystalline BiFeO3 thin film

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The functionalities and diverse metastable phases of multiferroic BiFeO3(BFO)thin films depend on the misfit strain.Although mixed phase-induced strain relaxation in multiphase BFO thin films is well known,it is unclear whether a single-crystalline BFO thin film can accommodate misfit strain without the involvement of its polymorphs.Thus,understanding the strain relaxation behavior is key to elucidating the lattice strain-property relationship.In this study,a correlative strain analysis based on dark-field inline electron holography(DIH)and quantitative scanning transmission electron microscopy(STEM)was performed to reveal the structural mechanism for strain accommodation of a single-crystalline BFO thin film.The nanoscale DIH strain analysis results indicated a random combination of multiple strain states that acted as a primary strain relief,forming irregularly strained nanodomains.The STEM-based bond length measurement of the corresponding strained nanodomains revealed a unique strain accommodation behavior achieved by a statistical combination of multiple modes of distorted structures on the unit-cell scale.The globally integrated strain for each nanodomain was estimated to be close to-1.5％,irrespective of the nanoscale strain states,which was consistent with the fully strained BFO film on the SrTiO3 substrate.Density functional theory calculations suggested that strain accommodation by the combination of metastable phases was energetically favored compared to single-phase-mediated relaxation.This discovery allows a comprehensive understanding of strain accommodation behavior in ferroelectric oxide films,such as BFO,with various low-symmetry polymorphs.

BiFeO3scanning transmission electron microscopyelectron holographymultiferroic materialstrain mapping

Wooseon Choi、Bumsu Park、Jaejin Hwang、Gyeongtak Han、Sang-Hyeok Yang、Hyeon Jun Lee、Sung Su Lee、Ji Young Jo、Albina Y.Borisevich、Hu Young Jeong、Sang Ho Oh、Jaekwang Lee、Young-Min Kim

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Department of Energy Science,Sungkyunkwan University(SKKU),Suwon 16419,Republic of Korea

Samsung Electronics,Hwaseong 18448,Republic of Korea

Department of Physics,Pusan National University,Busan 46241,Republic of Korea

LG Energy Solution,Daejeon 34122,Republic of Korea

Department of Materials Science and Engineering,Kangwon National University,Republic of Korea

School of Materials Science and Engineering,Gwangju Institute of Science and Technology(GIST),Gwangju 61005,Republic of Korea

Center for Nanophase Materials Sciences,Oak Ridge National Laboratory,TN 37831,USA

Graduate School of Semiconductor Materials and Devices Engineering,Ulsan National Institute of Science and Technology(UNIST),Ulsan 44919,Republic of Korea

Department of Energy Engineering,KENTECH Institute for Energy Materials and Devices,Korea Institute of Energy Technology(KENTECH),Naju 58330,Republic of Korea

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Samsung Research Fundings & Incubation Center of Samsung ElectronicsNational Research Foundation of Korea(NRF) funded by the Korean government in KoreaFaCT,an Energy Frontier Research Center funded by the U.S.Department of Energy,Office of Science,Office of Basic Energy Science,

SRFC-MA1702-012023R1A2C2002403

2024

10.1088/1674-1056/ad62e0

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(9)