In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits

陶浩然 ¹杜磊 ¹郭亮亮 ¹陈勇 ¹张海峰 ¹杨小燕 ¹徐国良 ²张驰 ²贾志龙 ²段鹏 ¹郭国平³

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作者信息

1. CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China
2. Origin Quantum Computing Company Limited,Hefei 230088,China
3. CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China;CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China;Origin Quantum Computing Company Limited,Hefei 230088,China
折叠

Abstract

The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal-air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6 × 105 to 7.9 × 105 at low input power and from 6.8 × 106 to 1.1 × 107 at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.

Key words

anti-aging/oxidation/dielectric loss/Nb superconducting quantum circuits

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基金项目

National Natural Science Foundation of China(12034018)

National Natural Science Foundation of China(11625419)

USTC Center for Micro and Nanoscale Research and Fabrication()

出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

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