首页|In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits
In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits
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The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal-air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6 × 105 to 7.9 × 105 at low input power and from 6.8 × 106 to 1.1 × 107 at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.
CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China
CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China
Origin Quantum Computing Company Limited,Hefei 230088,China
National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaUSTC Center for Micro and Nanoscale Research and Fabrication
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