首页|Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator

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Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semi-conductor quantum computation.To satisfy the connectivity requirements and reduce the lithographic complexity,utilizing the qubit array structure and the circuit quantum electrodynamics(cQED)architecture together is expected to be a feasible scaling scheme.A triple-quantum dot(TQD)coupled with a superconducting resonator is regarded as a basic cell to demon-strate this extension scheme.In this article,we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide(CPW)resonator.The TQD can couple to the resonator via the right double-quantum dot(RDQD),which reaches the strong coupling regime with a charge-photon coupling strength of go/(2π)=175 MHz.Moreover,we illustrate the high tunability of the TQD through the characterization of stability diagrams,quadruple points(QPs),and the quantum cellular automata(QCA)process.Our results contribute to fostering the exploration of silicon-based qubit integration.

triple-quantum dotstrong couplingcircuit quantum electrodynamics(cQED)scalable silicon-based cQED architectures

江顺利、蒋天翼、徐永强、吴睿、郝天岳、叶澍坤、蔡冉冉、王保传、李海欧、曹刚、郭国平

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CAS Key Laboratory of Quantum Information,University of Science and Technology of China,Hefei 230026,China

CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China

Origin Quantum Computing Company Limited,Hefei 230088,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaChina Postdoctoral Science FoundationChina Postdoctoral Science FoundationUSTC Center for Microand Nano scale Research and Fabrication

92265113120743681230456012034018BX202202812023M733408

2024

10.1088/1674-1056/ad711d

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(9)