中国物理B(英文版)2024,Vol.33Issue(9) :485-491.DOI:10.1088/1674-1056/ad6077

Strain-tuned electronic and valley-related properties in Janus monolayers of SWSiX2(X=N,P,As)

戚云西 赵俊 曾晖
中国物理B(英文版)2024,Vol.33Issue(9) :485-491.DOI:10.1088/1674-1056/ad6077

Strain-tuned electronic and valley-related properties in Janus monolayers of SWSiX2(X=N,P,As)

戚云西 1赵俊 1曾晖2
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作者信息

  • 1. New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
  • 2. School of Microelectronics,Nanjing University of Science and Technology,Nanjing 210094,China
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Abstract

Exploring novel two-dimensional(2D)valleytronic materials has an essential impact on the design of spintronic and valleytronic devices.Our first principles calculation results reveal that the Janus SWSiX2(X=N,P,As)monolayer has excellent dynamical and thermal stability.Owing to strong spin-orbit coupling(SOC),the SWSiX2 monolayer exhibits a valence band spin splitting of up to 0.49 eV,making it promising 2D semiconductor for valleytronic applications.The opposite Berry curvatures and optical selection rules lead to the coexistence of valley and spin Hall effects in the SWSiX2 monolayer.Moreover,the optical transition energies can be remarkably modulated by the in-plane strains.Large tensile(compressive)in-plane strains can achieve spin flipping in the SWSiN2 monolayer,and induce both SWSiP2 and SWSiAs2 monolayers transit from semiconductor to metal.Our research provides new 2D semiconductor candidates for designing high-performance valleytronic devices.

Key words

first-principles calculations/two-dimensional/valleytronic/spintronic

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基金项目

National Natural Science Foundation of China(62174088)

National Natural Science Foundation of China(62371238)

出版年

2024
中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
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