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Current-perpendicular-to-plane transport properties of 2D ferromagnetic material CrTe2

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Heterostructures of van der Waals(vdW)ferromagnetic materials have become a focal point in research of low-dimensional spintronic devices.The current direction in spin valves is commonly perpendicular to the plane(CPP).How-ever,the transport properties of the CPP mode remain largely unexplored.In this work,current-in-plane(CIP)mode and CPP mode for CrTe2 thin films are carefully studied.The temperature-dependent longitudinal resistance transitions from metallic(CIP)to semiconductor behavior(CPP),with the electrical resistivity of CPP increased by five orders of magni-tude.More importantly,the transport properties of the CPP can be categorized into a single-gap tunneling-through model with the activation energy(Ea)of～1.34 meV/gap at 300-150 K,the variable range hopping model with a linear negative magnetoresistance at 150-20 K,and weak localization region with a nonlinear magnetic resistance below 20 K.This study explores the vertical transport in CrTe2 materials for the first time,contributing to understand its unique properties and to pave the way for its potential in spin valve devices.

2D vdWCrTe2current-perpendicular-to-planenegative magnetic resistance

王瑾、刘宇、王太坤、徐永康、王双海、何坤、邓亚峰、闫鹏飞、何亮

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School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China

State Key Laboratory of Spintronics,Nanjing University,Suzhou 215163,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Jiangsu Province of China

1224140361974061BK20140054

2024

10.1088/1674-1056/ad5af1

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(9)