首页|Simulation of magnetization process and Faraday effect of magnetic bilayer films

Simulation of magnetization process and Faraday effect of magnetic bilayer films

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We described ferromagnetic film and bilayer films composed of two ferromagnetic layers coupled through antiferro-magnetic interfacial interaction by classical Heisenberg model and simulated their magnetization state,magnetic perme-ability,and Faraday effect at zero and finite temperature by using the Landau-Lifshitz-Gilbert(LLG)equation.The results indicate that in a microwave field with positive circular polarization,the ferromagnetic film has one resonance peak while the bilayer film has two resonance peaks.However,the resonance peak disappears in ferromagnetic film,and only one resonance peak emerges in bilayer film in the negative circularly polarized microwave field.When the microwave field's frequency exceeds the film's resonance frequency,the Faraday rotation angle of the ferromagnetic film is the greatest,and it decreases when the thickness of the two halves of the bilayer is reduced.When the microwave field's frequency remains constant,the Faraday rotation angle fluctuates with temperature in the same manner as spontaneous magnetization does.When a DC magnetic field is applied in the direction of the anisotropic axis of the film,the Faraday rotation angle varies with the DC magnetic field and shows a similar shape of the hysteresis loop.

magnetic bilayer filmsmagnetic permeabilityhysteresis loopFaraday effectLandau-Lifshitz-Gilbert(LLG)equation

高升、杜安、张磊、李天广、马大成

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Department of Basic and General Studies,Shenyang Institute of Science and Technology,Shenyang 110167,China

College of Science,Northeastern University,Shenyang 110819,China

National Frontiers Science Center for Industrial Intelligence and Systems Optimization,Northeastern University,Shenyang 110819,China

Office of Academic Research,Shenyang Institute of Science and Technology,Shenyang 110167,China

State Key Laboratory of Robotics,Shenyang Institute of Automation,Chinese Academy of Sciences,Shenyang 110016,China

Institutes for Robotics and Intelligent Manufacturing,Chinese Academy of Sciences,Shenyang 110016,China

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Research Program of Shenyang Institute of Science and Technology

ZD-2024-05

2024

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
年,卷(期):2024.33(9)