首页|Lewis acid-doped transition metal dichalcogenides for ultraviolet-visible photodetectors

Lewis acid-doped transition metal dichalcogenides for ultraviolet-visible photodetectors

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Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensi-tivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl4 as a light absorption layer on the surface of WS2,significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS2 PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3 × 1011 Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS2,MoSe2,and WSe2)and fabricate WS2 lateral p-n heterojunction PDs.

two-dimensional(2D)materialsp-type dopingtransition metal dichalcogenidesphotodetectors

杨恒、马明军、裴永峰、康雨凡、延嘉璐、贺栋、蒋昌忠、李文庆、肖湘衡

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School of Physics and Technology,Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University Wuhan 430072,China

School of Physics and Technology,Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan 430072,China

Wuhan Research Center for Infectious Diseases and Cancer,Chinese Academy of Medical Sciences,Wuhan 430072,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaFundamental Research Funds for the Center UniversitiesFundamental Research Funds for the Center Universities

12025503U23B207212074293122751982042024kf00012042023kf0196

2024

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
年,卷(期):2024.33(9)