首页|Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO2 thin films

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO2 thin films

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Ferroelectric HfO2 has attracted much attention owing to its superior ferroelectricity at an ultra-thin thickness and good compatibility with Si-based complementary metal-oxide-semiconductor(CMOS)technology.However,the crys-tallization of polar orthorhombic phase(o-phase)HfO2 is less competitive,which greatly limits the ferroelectricity of the as-obtained ferroelectric HfO2 thin films.Fortunately,the crystallization of o-phase HfO2 can be thermodynamically mod-ulated via interfacial stress engineering.In this paper,the growth of improved ferroelectric Al doped HfO2(HfO2∶Al)thin films on(111)-oriented Si substrate has been reported.Structural analysis has suggested that nonpolar monoclinic HfO2∶Al grown on(111)-oriented Si substrate suffered from a strong compressive strain,which promoted the crystalliza-tion of(111)-oriented o-phase HfO2 in the as-grown HfO2∶Al thin films.In addition,the in-plane lattice of(111)-oriented Si substrate matches well with that of(111)-oriented o-phase HfO2,which further thermally stabilizes the o-phase HfO2.Accordingly,an improved ferroelectricity with a remnant polarization(2Pr)of 26.7 pC/cm2 has been obtained.The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO2 thin films.

improved ferroelectricityinterfacial stress engineeringcompressive strainHfO2

陈思学、陈明明、刘圆、曹大威、陈国杰

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Department of Microelectronics,Jiangsu University,Zhenjiang 212013,China

Department of Physics,Jiangsu University,Zhenjiang 212013,China

Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,Foshan University Foshan 528225,China

Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,ChinaProject of Faculty of Agricultural Equipment of Jiangsu University

2020B1212030010NZXB20210202

2024

10.1088/1674-1056/ad4ff4

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(9)