首页|Pit density reduction for AlN epilayers grown by molecular beam epitaxy using Al modulation method

Pit density reduction for AlN epilayers grown by molecular beam epitaxy using Al modulation method

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We have investigated homoepitaxy of AlN films grown by molecular beam epitaxy on AlN/sapphire templates by adopting both the continuous growth method and the Al modulation epitaxy(AME)growth method.The continuous growth method encounters significant challenges in controlling the growth mode.As the precise Al/N=1.0 ratio is difficult to achieve,either the excessive Al-rich or N-rich growth mode occurs.In contrast,by adopting the AME growth method,such a difficulty has been effectively overcome.By manipulating the supply time of the Al and nitrogen sources,we were able to produce AlN films with much improved surface morphology.The first step of the AME method,only supplying Al atoms,is important to wet the surface and the Al adatoms can act as a surfactant.Optimization of the initial Al supply time can effectively reduce the pit density on the grown AlN surface.The pits density dropped from 12 pits/μm2 to 1 pit/μm2 and the surface roughness reduced from 0.72 nm to 0.3 nm in a 2 × 2 μm2 area for the AME AlN film homoepitaxially grown on an AlN template.

Al modulation epitaxymolecular beam epitaxyAlNpits

刘欢、邵鹏飞、陈松林、陶涛、严羽、谢自力、刘斌、陈敦军、陆海、张荣、王科

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Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China

Hefei National Laboratory,Hefei 230088,China

Xiamen University,Xiamen 361005,China

Innovation Program for Quantum Science and TechnologyNational Key R&D Program of ChinaKey R&D Program of Jiangsu ProvinceKey R&D Program of Jiangsu ProvinceNational Naturaal Science Foundation of ChinaJiangsu Special Professorship,Collaborative Innovation Center of Solid-State Lighting and Energysaving Electronics

2021ZD03034002022YFB3605602BE2020004-3BE202102661974065

2024

10.1088/1674-1056/ad7671

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(10)