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Regulating Anderson localization with structural defect disorder

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Localization due to disorder has been one of the most intriguing theoretical concepts that evolved in condensed matter physics.Here,we expand the theory of localization by considering two types of disorders at the same time,namely,the original Anderson's disorder and the structural defect disorder,which has been suggested to be a key component in recently discovered two-dimensional amorphous materials.While increasing the degree of both disorders could induce localization of wavefunction in real space,we find that a small degree of structural defect disorder can significantly enhance the localiza-tion.As the degree of structural defect disorder increases,localized states quickly appear within the extended phase to enter a broad crossover region with mixed phases.We establish two-dimensional diagrams for the wavefunction localization and conductivity to highlight the interplay between the two types of disorders.Our theoretical model provides a comprehen-sive understanding of localization in two-dimensional amorphous materials and highlights the promising tunability of their transport properties.

Anderson localizationstructural defect disorderelectronic transport properties

程谋阳、陈浩翔、陈基

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School of Physics,Peking University,Beijing 100871,China

Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials,Peking University,Beijing 100871,China

Frontiers Science Center for Nano-Optoelectronics,Peking University,Beijing 100871,China

Collaborative Innovation Center of Quantum Matter,Beijing 100871,China

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National Natural Science Foundation of ChinaNational Key R&D Program of ChinaStrategic Priority Research Program of Chinese Academy of SciencesBeijing Natural Science Foundation

921651012021YFA1400500XDB33000000JQ22001

2024

10.1088/1674-1056/ad711c

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(10)