Spin-orbit torque effect in silicon-based sputtered Mn3Sn film

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外文摘要：Noncollinear antiferromagnet Mn3Sn has shown remarkable efficiency in charge-spin conversion,a novel magnetic spin Hall effect,and a stable topological antiferromagnetic state,which has resulted in great interest from researchers in the field of spin-orbit torque.Current research has primarily focused on the spin-orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn3Sn films.However,this method is not suitable for large-scale industrial preparation.In this study,amorphous Mn3Sn films and Mn3Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates.The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin-orbit torque effect generated by in-plane polarized spin currents existed in the Mn3Sn/Py heterostructure,with a spin-orbit torque efficiency of 0.016.Additionally,we prepared the perpendicular magnetized Mn3Sn/CoTb heterostructure based on amorphous Mn3Sn film,where the spin-orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density(3.9 x 107 A/cm2)compared to Ta/CoTb heterostructure.This research reveals the spin-orbit torque effect of amorphous Mn3Sn films and establishes a foundation for further advancement in the practical application of Mn3Sn materials in spintronic devices.

外文关键词：

spintronicsnoncollinear antiferromagnetismspin-orbit torque

作者：

卢莎、孟德全、Adnan Khan、王子傲、陈是位、梁世恒

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作者单位：

School of Physics,Hubei University,Wuhan 430062,China

Key Laboratory for Intelligent Sensing System and Security of Ministry of Education,Wuhan 430062,China

基金：

National Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Hubei ProvinceOpen Research Fund of Songshan Lake Materials Laboratory

项目编号：

2022YFE0103300122741192022CFA0882022SLABFN04

出版年：

2024

DOI：

10.1088/1674-1056/ad6079

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(10)