Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions

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外文摘要：We deposited indium-tin-oxide(ITO)films on silicon and quartz substrates by magnetron sputtering technology in pure argon.Using electrostatic quadrupole plasma diagnostic technology,we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface,with special attention to the production of high-energy negative oxygen ions,and elucidate the mechanism behind its production.At the same time,the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films.Combining with the kinetic property analysis of sputtering dam-age mechanism of transparent conductive oxide(TCO)thin films,this study provides valuable physical understanding of optimization of TCO thin film deposition process.

外文关键词：

magnetron sputteringion energyITO thin filmhigh energy oxygen anion

作者：

李茂洋、莫超超、季佩宇、张潇漫、陈佳丽、诸葛兰剑、吴雪梅、谭海云、黄天源

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作者单位：

School of Physical Science and Technology,Soochow University,Suzhou 215000,China

Jiangsu Key Laboratory of Frontier Material Physics and Devices,Suzhou 215000,China

Suzhou Maxwell Technologies Co.,Ltd.,Suzhou 215000,China

School of Optoelectronic Science and Engineering,Soochow University,Suzhou 215000,China

School of Optical and Electronic Information,Suzhou City University & Suzhou Key Laboratory of Biophotonics,Suzhou 215104,China

Analysis and Testing Center,Soochow University,Suzhou 215000,China

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基金：

National Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of China

项目编号：

2022YFE030500011217516012305284

出版年：

2024

DOI：

10.1088/1674-1056/ad62df

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(10)