首页|Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM

Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM

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The stable sub-angstrom resolution of the aberration-corrected scanning transmission electron microscope(AC-STEM)makes it an advanced and practical characterization technique for all materials.Owing to the prosperous advance-ment in computational technology,specialized software and programs have emerged as potent facilitators across the entirety of electron microscopy characterization process.Utilizing advanced image processing algorithms promotes the rectifica-tion of image distortions,concurrently elevating the overall image quality to superior standards.Extracting high-resolution,pixel-level discrete information and converting it into atomic-scale,followed by performing statistical calculations on the physical matters of interest through quantitative analysis,represent an effective strategy to maximize the value of electron microscope images.The efficacious utilization of quantitative analysis of electron microscope images has become a pro-gressively prominent consideration for materials scientists and electron microscopy researchers.This article offers a concise overview of the pivotal procedures in quantitative analysis and summarizes the computational methodologies involved from three perspectives:contrast,lattice and strain,as well as atomic displacements and polarization.It further elaborates on practical applications of these methods in electronic functional materials,notably in piezoelectrics/ferroelectrics and ther-moelectrics.It emphasizes the indispensable role of quantitative analysis in fundamental theoretical research,elucidating the structure-property correlations in high-performance systems,and guiding synthesis strategies.

AC-STEMquantitative analysispolarizationelectronic functional materials

曲万博、赵志昊、杨宇轩、张杨、郭生武、李飞、丁向东、孙军、武海军

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State Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an71 0049,China

Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education,and School of Electronic and Information Engineering,Xi'an Jiaotong University,Xi'an 710049,China

Instrumental Analysis Center of Xi'an Jiaotong University,Xi'an Jiaotong University,Xi'an 710049,China

2024

10.1088/1674-1056/ad7afc

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(11)