首页|Polarization pinning at antiphase boundaries in multiferroic YbFeO3

Polarization pinning at antiphase boundaries in multiferroic YbFeO3

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The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain walls.We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO3.We have directly resolved the atomic structure of a sharp antiphase boundary(APB)in YbFeO3 thin films using a combination of aberration-corrected scanning transmission electron microscopy(STEM)and total energy calculations based on density-functional theory(DFT).We find the presence of a layer of FeO6 octahedra at the APB that bridges the adjacent domains.STEM imaging shows a reversal in the direction of polarization on moving across the APB,which DFT calculations confirm is structural in nature as the polarization reversal reduces the distortion of the FeO6 octahedral layer at the APB.Such APBs in hexagonal perovskites are expected to serve as domain-wall pinning sites and hinder ferroelectric switching of the domains.

hexagonal ferritesferroelectricmultiferroictopological defectSTEM

Guodong Ren、Pravan Omprakash、Xin Li、Yu Yun、Arashdeep S.Thind、Xiaoshan Xu、Rohan Mishra

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Institute of Materials Science and Engineering,Washington University in St.Louis,St.Louis,MO 63130,USA

Department of Physics and Astronomy,University of Nebraska,Lincoln,NE 68588,USA

Department of Mechanical Engineering & Mechanics,Drexel University,Philadelphia,PA 19104-2875,USA

Nebraska Center for Materials and Nanoscience,University of Nebraska,Lincoln,NE 68588,USA

Department of Mechanical Engineering and Material Science,Washington University in St.Louis,St,Louis,MO 63130,USA

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2024

10.1088/1674-1056/ad8cbc

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(11)