首页|Valley switch effect in an α-T3 lattice-based superconducting interferometer

Valley switch effect in an α-T3 lattice-based superconducting interferometer

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Valley switch effect in an α-T3 lattice-based superconducting interferometer
Dirac electrons possess a valley degree of freedom,which is currently under investigation as a potential information carrier.We propose an approach to generate and manipulate the valley-switching current(VSC)through Andreev reflection using an interferometer-based superconductor hybrid junction.The interferometer comprises a ring-shaped structure formed by topological kink states in the α-T3 lattice via carefully designed electrostatic potentials.Our results demonstrate the feasibility of achieving a fully polarized VSC in this device without contamination from cotunneling electrons sharing the same valley as the incident electron.Furthermore,we show that control over the fully polarized VSC can be achieved by applying a nonlocal gate voltage or modifying the global parameter α.The former alters the dynamic phase of electrons while the latter provides an α-dependent Berry phase,both directly influencing quantum interference and thereby affecting performance in terms of generating and manipulating VSC,crucial for advancements in valleytronics.

valley switch effectvalleytronicsAndreev reflectionα-T3 lattice

魏亚军、汪军

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School of Physics,Southeast University,Nanjing 210096,China

valley switch effect valleytronics Andreev reflection α-T3 lattice

2024

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
年,卷(期):2024.33(11)