Relation of Ⅴ/Ⅲ ratio of AlN interlayer with the polarity of nitride

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外文摘要：N-polar GaN film was obtained by using a high-temperature AlN buffer layer.It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same Ⅴ/Ⅲ ratio as that of the high-temperature AlN layer.Continuing to increase the Ⅴ/Ⅲ ratio of the low-temperature AlN interlayer,the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated.Finally,we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy(XPS),which provides a new direction for the control of GaN polarity.

外文关键词：

semiconductorsⅢ-Ⅴ semiconductorschemistry of MOCVD and other vapor deposition meth-ods

作者：

苏兆乐、李阳锋、胡小涛、宋祎萌、邓震、马紫光、杜春花、王文新、贾海强、江洋、陈弘

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作者单位：

Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

University of Chinese Academy of Sciences,Beijing 100049,China

School of Mathematics and Physics,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing,Beijing 100083,China

The Yangtze River Delta Physics Research Center,Liyang 213000,China

Songshan Lake Materials Laboratory,Dongguan 523808,China

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出版年：

2024

DOI：

10.1088/1674-1056/ad71b2

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(11)