Relation of Ⅴ/Ⅲ ratio of AlN interlayer with the polarity of nitride

苏兆乐 ¹李阳锋 ¹胡小涛 ¹宋祎萌 ²邓震 ³马紫光 ¹杜春花 ¹王文新 ¹贾海强 ⁴江洋 ¹陈弘⁴

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作者信息

1. Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China
2. School of Mathematics and Physics,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing,Beijing 100083,China
3. Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;The Yangtze River Delta Physics Research Center,Liyang 213000,China
4. Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan 523808,China
折叠

Abstract

N-polar GaN film was obtained by using a high-temperature AlN buffer layer.It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same Ⅴ/Ⅲ ratio as that of the high-temperature AlN layer.Continuing to increase the Ⅴ/Ⅲ ratio of the low-temperature AlN interlayer,the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated.Finally,we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy(XPS),which provides a new direction for the control of GaN polarity.

Key words

semiconductors/Ⅲ-Ⅴ semiconductors/chemistry of MOCVD and other vapor deposition meth-ods

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出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

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