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Structural behavior and metallization of AsSbS3 at high pressure
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Structural behavior and metallization of AsSbS3 at high pressure
The group Ⅴ-Ⅵ semiconductor material getchellite(crystalline AsSbS3)has garnered extensive attention due to its wonderful electronic and optical properties.The pressure engineering is one of the most effective methods to modulate crystal structure and physical properties of semiconductor materials.In this study,the structural behavior,optical and elec-trical properties of AsSbS3 under high pressure have been investigated systematically by in situ high-pressure experiments for the first time.The monoclinic structure of AsSbS3 remains stable up to 47.0 GPa without phase transition.The gradual lattice contraction with increasing pressure results in a continuous narrowing of the bandgap then leads to pressure-induced metallization of AsSbS3 at 31.5 GPa.Our research presents a high-pressure strategy for tuning the crystal structure and physical properties of AsSbS3 to expand its potential applications in electronic and optoelectronic fields.
School of Science,Wuhan University of Technology,Wuhan 430070,China
Shandong Key Laboratory of Optical Communication Science and Technology,School of Physics Science and Information Technology,Liaocheng University,Liaocheng 252000,China
AsSbS3 structural behavior pressure-induced metallization high pressure
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