Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling

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外文标题：Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin-orbit coupling

外文摘要：Combining theory and computation,we explore the Goos-Hänchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin-orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spin-polarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.

外文关键词：

semiconductor spintronicssingle-layered semiconductor microstructure(SLSM)spin-orbit cou-pling(SOC)Goos-Hänchen(GH)effectelectron-spin polarization

作者：

陈嘉丽、陈赛艳、温丽、曹雪丽、卢卯旺

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作者单位：

College of Physics and Electronic Information Engineering,Guilin University of Technology,Guilin 541004,China

关键词：

semiconductor spintronics single-layered semiconductor microstructure(SLSM) spin-orbit cou-pling(SOC) Goos-Hänchen(GH)effect electron-spin polarization

出版年：

2024

DOI：

10.1088/1674-1056/ad6b83

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(11)