Pressure-induced superconductivity and phase transition in PbSe and PbTe

江宇阳 ¹裴翠颖 ¹王琦 ²吴珏霏 ¹张丽丽 ³熊超 ¹齐彦鹏⁴

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作者信息

1. School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
2. School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China
3. Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201203,China
4. School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China;Shanghai Key Laboratory of High-resolution Electron Microscopy,ShanghaiTech University,Shanghai 201210,China
折叠

Abstract

The Ⅳ-Ⅵ semiconducting chalcogenides are a large material family with distinct physical behavior.Here,we sys-tematically investigate the effect of pressure on the electronic and crystal structures of PbSe and PbTe by combining high-pressure electrical transport and synchrotron x-ray diffraction(XRD)measurements.The resistivity of PbSe and PbTe changes dramatically under high pressure and a non-monotonic evolution of p(T)is observed.Both PbSe and PbTe are found to undergo semiconductor-metal transition upon compression and show superconductivity under higher pressure.The structural evolutions from the Fm3m to Pnma phase and then to the Pm3m phase in PbSe are verified by the x-ray diffraction.The present findings reveal the internal correlation between the structural evolution and the physical properties in lead chalcogenides.

Key words

Ⅳ-Ⅵ semiconductor/high pressure/superconductivity/crystal structure

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出版年

2024

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

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