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Pressure-induced superconductivity and phase transition in PbSe and PbTe

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Pressure-induced superconductivity and phase transition in PbSe and PbTe
The Ⅳ-Ⅵ semiconducting chalcogenides are a large material family with distinct physical behavior.Here,we sys-tematically investigate the effect of pressure on the electronic and crystal structures of PbSe and PbTe by combining high-pressure electrical transport and synchrotron x-ray diffraction(XRD)measurements.The resistivity of PbSe and PbTe changes dramatically under high pressure and a non-monotonic evolution of p(T)is observed.Both PbSe and PbTe are found to undergo semiconductor-metal transition upon compression and show superconductivity under higher pressure.The structural evolutions from the Fm3m to Pnma phase and then to the Pm3m phase in PbSe are verified by the x-ray diffraction.The present findings reveal the internal correlation between the structural evolution and the physical properties in lead chalcogenides.

Ⅳ-Ⅵ semiconductorhigh pressuresuperconductivitycrystal structure

江宇阳、裴翠颖、王琦、吴珏霏、张丽丽、熊超、齐彦鹏

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School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China

ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China

Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201203,China

Shanghai Key Laboratory of High-resolution Electron Microscopy,ShanghaiTech University,Shanghai 201210,China

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Ⅳ-Ⅵ semiconductor high pressure superconductivity crystal structure

2024

10.1088/1674-1056/ad8ecc

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(12)