Abstract
Charge trapping devices incorporating 2D materials and high-κ dielectrics have emerged as promising candidates for compact,multifunctional memory devices compatible with silicon-based manufacturing processes.However,traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed.Here,we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al2O3 trapping layer with a MoS2 channel,where charge traps reside within the Al2O3 bulk confirmed by transfer curves with different gate-voltage sweeping rates and photoluminescence(PL)spectra.The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed(～300 ns),an extremely low OFF current of 10-14 A,a high ON/OFF current ratio of up to 107,and stable retention and endurance properties.Furthermore,the device with a simple symmetrical structure exhibits VD polarity-dependent reverse rectification behavior in the high resistance state(HRS),with a rectification ratio of 105.Additionally,utilizing the synergistic modulation of the conductance of the MoS2 channel by VD and VG,it achieves gate-tunable reverse rectifier and ternary logic capabilities.
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