中国物理B(英文版)2024,Vol.33Issue(12) :167-172.DOI:10.1088/1674-1056/ad8a50

Higher-order topological corner states and origin in monolayer LaBrO

王庆 郝宁
中国物理B(英文版)2024,Vol.33Issue(12) :167-172.DOI:10.1088/1674-1056/ad8a50

Higher-order topological corner states and origin in monolayer LaBrO

王庆 1郝宁2
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作者信息

  • 1. Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices,High Magnetic Field Laboratory,HFIPS,Anhui,Chinese Academy of Sciences,Hefei 230031,China;Science Island Branch of Graduate School,University of Science and Technology of China,Hefei 230026,China
  • 2. Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices,High Magnetic Field Laboratory,HFIPS,Anhui,Chinese Academy of Sciences,Hefei 230031,China
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Abstract

Intrinsic higher-order topological insulators driven solely by orbital coupling are rare in electronic materials.Here,we propose that monolayer LaBrO is an intrinsic two-dimensional second-order topological insulator.The generalized second-order topological phase arises from the coupling between the 5d orbital of the La atom and the 2p orbital of the O atom.The underlying physics can be thoroughly described by a four-band generalized higher-order topological model.Notably,the edge states and corner states of monolayer LaBrO exhibit different characteristics in terms of morphology,number,and location distribution under different boundary and nanocluster configurations.Furthermore,the higher-order topological corner states of monolayer LaBrO are robust against variations in spin-orbit coupling and different values of Hubbard U.This provides a material platform for studying intrinsic 2D second-order topological insulators.

Key words

second order topological insulator/first-principles calculations/higher order topological model/zero-dimensional corner state

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出版年

2024
中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子:0.995
ISSN:1674-1056
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