Higher-order topological corner states and origin in monolayer LaBrO

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外文标题：Higher-order topological corner states and origin in monolayer LaBrO

外文摘要：Intrinsic higher-order topological insulators driven solely by orbital coupling are rare in electronic materials.Here,we propose that monolayer LaBrO is an intrinsic two-dimensional second-order topological insulator.The generalized second-order topological phase arises from the coupling between the 5d orbital of the La atom and the 2p orbital of the O atom.The underlying physics can be thoroughly described by a four-band generalized higher-order topological model.Notably,the edge states and corner states of monolayer LaBrO exhibit different characteristics in terms of morphology,number,and location distribution under different boundary and nanocluster configurations.Furthermore,the higher-order topological corner states of monolayer LaBrO are robust against variations in spin-orbit coupling and different values of Hubbard U.This provides a material platform for studying intrinsic 2D second-order topological insulators.

外文关键词：

second order topological insulatorfirst-principles calculationshigher order topological modelzero-dimensional corner state

作者：

王庆、郝宁

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作者单位：

Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices,High Magnetic Field Laboratory,HFIPS,Anhui,Chinese Academy of Sciences,Hefei 230031,China

Science Island Branch of Graduate School,University of Science and Technology of China,Hefei 230026,China

关键词：

second order topological insulator first-principles calculations higher order topological model zero-dimensional corner state

出版年：

2024

DOI：

10.1088/1674-1056/ad8a50

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(12)