首页|Upconversion photoluminescence of Er-doped Bi4Ti3O12 ceramics enhanced by vacancy clusters revealed by positron annihilation spectroscopy

Upconversion photoluminescence of Er-doped Bi4Ti3O12 ceramics enhanced by vacancy clusters revealed by positron annihilation spectroscopy

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Upconversion photoluminescence of Er-doped Bi4Ti3O12 ceramics enhanced by vacancy clusters revealed by positron annihilation spectroscopy
Doping of rare earth elements into Bi4Ti3O12 can significantly enhance the upconversion photoluminescence(UCPL)properties,but its structure-property relationship is still unclear.In this work,Er-doped bismuth titanate Bi4-xErxTi3O12(x=0,0.1,0.2,0.3,0.4,0.5)ceramics were synthesized via solid-state reaction method.The x-ray diffraction analysis confirmed the orthorhombic crystalline structure of the Bi4-xErxTi3O12 ceramics without any secondary phases.Exper-iments and calculations of positron annihilation spectroscopy were carried out to characterize their defect structure.The comparison between the experimental and calculated lifetime revealed that vacancy clusters were the main defects in the ceramics.The increase of the intensity of the second positron lifetime component(I2)of Bi3.5Er0.5Ti3O12 ceramics in-dicated the presence of a high concentration of vacancy clusters.The UCPL spectra showed the sudden enhanced UCPL performance in Bi3.7Er0.3Ti3O12 and Bi3.5Er0.5Ti3O12 ceramics,which were consistent with the variation of the second positron lifetime component(I2).These results indicate that the enhanced UCPL properties are influenced not only by the concentrations of rare earth ions but also by the concentration of vacancy clusters present within the ceramics.

bismuth layered structurepositron annihilation lifetime spectroscopyupconversion photolumi-nescencevacancy clusters

程慧茹、李钰环、潘子文、刘建党、叶邦角

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State Key Laboratory of Particle Detection and Electronics,University of Science and Technology of China,Hefei 230026,China

bismuth layered structure positron annihilation lifetime spectroscopy upconversion photolumi-nescence vacancy clusters

2024

10.1088/1674-1056/ad84ca

中国物理B(英文版)
中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI
影响因子：0.995
ISSN：1674-1056
年,卷(期)：2024.33(12)