首页|Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50％Al composition
Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50％Al composition
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Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50％Al composition
We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in XRD 2θ-ω scans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces.For(AlN)m/(GaN)n SLs with an average Al composition of 50％,we have obtained an electron density up to 4.48 × 1019 cm-3 and a resis-tivity of 0.002 Ω·cm,and a hole density of 1.83 ×1018 cm-3 with a resistivity of 3.722 Ω·cm,both at room temperature.Furthermore,the(AlN)m/(GaN)n SLs exhibit a blue shift for their photoluminescence peaks,from 403 nm to 318 nm as GaN is reduced from n=11 to n=4 MLs,reaching the challenging UVB wavelength range.The results demonstrate that the(AlN)m/(GaN)n SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN,making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210000,China
School of Opto-Electronic Engineering,Zaozhuang University,Zaozhuang 277160,China
Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215000,China
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