Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50％Al composition

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外文摘要：We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in XRD 2θ-ω scans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces.For(AlN)m/(GaN)n SLs with an average Al composition of 50％,we have obtained an electron density up to 4.48 × 1019 cm-3 and a resis-tivity of 0.002 Ω·cm,and a hole density of 1.83 ×1018 cm-3 with a resistivity of 3.722 Ω·cm,both at room temperature.Furthermore,the(AlN)m/(GaN)n SLs exhibit a blue shift for their photoluminescence peaks,from 403 nm to 318 nm as GaN is reduced from n=11 to n=4 MLs,reaching the challenging UVB wavelength range.The results demonstrate that the(AlN)m/(GaN)n SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN,making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.

外文关键词：

AlGaNsuperlattices(SLs)molecular beam epitaxy(MBE)

作者：

李思琦、邵鹏飞、梁潇、陈松林、李振华、苏旭军、陶涛、谢自力、刘斌、M.Ajmal Khan、Li Wang、T.T.Lin、Hideki Hirayama、张荣、王科

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作者单位：

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210000,China

School of Opto-Electronic Engineering,Zaozhuang University,Zaozhuang 277160,China

Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215000,China

RIKEN,Saitama,Japan

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出版年：

2024

DOI：

10.1088/1674-1056/ad84cc

中国物理B(英文版)

中国物理学会和中国科学院物理研究所

中国物理B(英文版)

CSTPCDEI

影响因子：0.995

ISSN：1674-1056

年,卷(期)：2024.33(12)