首页|Strain-modulated antiferromagnetic Chern insulator in NiOsC16 monolayer
Strain-modulated antiferromagnetic Chern insulator in NiOsC16 monolayer
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NETL
NSTL
万方数据
Strain-modulated antiferromagnetic Chern insulator in NiOsC16 monolayer
Recently,Chern insulators in an antiferromagnetic(AFM)phase have been suggested theoretically and predicted in a few materials.However,the experimental observation of two-dimensional(2D)AFM quantum anomalous Hall effect is still a challenge to date.In this work,we propose that an AFM Chern insulator can be realized in a 2D monolayer of NiOsCl6 modulated by a compressive strain.Strain modulation is accessible experimentally and used widely in predicting and tuning topological nontrivial phases.With first-principles calculations,we have investigated the structural,magnetic,and electronic properties of NiOsCl6.Its stability has been confirmed through molecular dynamical simulations,elasticity constant,and phonon spectrum.It has a collinear AFM order,with opposite magnetic moments of 1.3 μB on each Ni/Os atom,respectively,and the Néel temperature is estimated to be 93 K.In the absence of strain,it functions as an AFM insulator with a direct gap with spin-orbital coupling included.Compressive strain will induce a transition from a normal insulator to a Chern insulator characterized by a Chern number C=1,with a band gap of about 30 meV.This transition is accompanied by a structural distortion.Remarkably,the Chern insulator phase persists within the 3％-10％compressive strain range,offering an alternative platform for the utilization of AFM materials in spintronic devices.
NETL
NSTL
万方数据
