Abstract
The precise compact modeling of magnetic devices is pivotal for the integrated design of spin-transfer torque magnetic tunnel junction(STT-MTJ)in conjunction with CMOS circuitry.This work presents a macro model for an STT-MTJ which is compatible with SPICE simulation platforms.The model accurately replicates the electrical performance of the MTJ,encompassing the resistance-voltage characteristics and the pulse-width-dependent state switching behavior,and is validated with various experimental data.Additionally,the impact of process variations,particularly those affecting the MTJ diameter and barrier thickness is investigated and summarized in a corner model.Monte Carlo simulations demonstrate that our adaptable and streamlined model can be efficiently incorporated into the design of integrated circuits.
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