中国物理快报(英文版)2024,Vol.41Issue(2) :57-68.DOI:10.1088/0256-307X/41/2/026301

Profiling Electronic and Phononic Band Structures of Semiconductors at Finite Temperatures:Methods and Applications

张燮 康俊 魏苏淮
中国物理快报(英文版)2024,Vol.41Issue(2) :57-68.DOI:10.1088/0256-307X/41/2/026301

Profiling Electronic and Phononic Band Structures of Semiconductors at Finite Temperatures:Methods and Applications

张燮 1康俊 2魏苏淮2
扫码查看

作者信息

  • 1. School of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an 710072,China
  • 2. Beijing Computational Science Research Center,Beijing 100193,China
  • 折叠

Abstract

Semiconductor devices are often operated at elevated temperatures that are well above zero Kelvin,which is the temperature in most first-principles density functional calculations.Computational approaches to com-puting and understanding the properties of semiconductors at finite temperatures are thus in critical demand.In this review,we discuss the recent progress in computationally assessing the electronic and phononic band structures of semiconductors at finite temperatures.As an emerging semiconductor with particularly strong temperature-induced renormalization of the electronic and phononic band structures,halide perovskites are used as a representative example to demonstrate how computational advances may help to understand the band struc-tures at elevated temperatures.Finally,we briefly illustrate the remaining computational challenges and outlook promising research directions that may help to guide future research in this field.

引用本文复制引用

基金项目

National Natural Science Foundation of China(11991060)

National Natural Science Foundation of China(52172136)

National Natural Science Foundation of China(12088101)

National Natural Science Foundation of China(12074029)

National Natural Science Foundation of China(U2230402)

出版年

2024
中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDCSCDEI
影响因子:0.515
ISSN:0256-307X
参考文献量131
段落导航相关论文