首页|High-Performance Organic Field-Effect Transistors Based on Two-Dimensional Vat Orange 3 Crystals

High-Performance Organic Field-Effect Transistors Based on Two-Dimensional Vat Orange 3 Crystals

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The exploration and research of low-cost,environmentally friendly,and sustainable organic semiconductor materials are of immense significance in various fields,including electronics,optoelectronics,and energy con-version.Unfortunately,these semiconductors have almost poor charge transport properties,which range from~10-4 cm2·V-1·s-1 to~10-2 cm2·V-1·s-1.Vat orange 3,as one of these organic semiconductors,has great potential due to its highly conjugated structure.We obtain high-quality multilayered Vat orange 3 crystals with two-dimensional(2D)growth on h-BN surfaces with thickness of 10-100 nm using physical vapor transport.Ra-man's results confirm the stability of the chemical structure of Vat orange 3 during growth.Furthermore,by leveraging the structural advantages of 2D materials,an organic field-effect transistor with a 2D vdW vertical het-erostructure is further realized with h-BN encapsulation and multilayered graphene contact electrodes,resulting in an excellent transistor performance with On/Off ratio of 104 and high field-effect mobility of 0.14cm2·V-1·s-1.Our results show the great potential of Vat orange 3 with 2D structures in future nano-electronic applications.Furthermore,we showcase an approach that integrates organic semiconductors with 2D materials,aiming to offer new insights into the study of organic semiconductors.

闫宁、熊志仁、秦成兵、李小茜

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State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Opto-Electronics,Shanxi University,Taiyuan 030006,China

Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China

State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Laser Spectroscopy,Shanxi University,Taiyuan 030006,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of China

U21A6004623751606227418012004389

2024

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子:0.515
ISSN:0256-307X
年,卷(期):2024.41(2)
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