Abstract
We investigate the anisotropic band structure and its evolution under tensile strains along different crystal-lographic directions in bulk black phosphorus(BP)using angle-resolved photoemission spectroscopy and density functional theory.The results show that there are band crossings in the Z-L(armchair)direction,but not in the Z-A(zigzag)direction.The corresponding dispersion-k distributions near the valence band maximum(VBM)exhibit quasi-linear or quadratic relationships,respectively.Along the armchair direction,the tensile strain expands the interlayer spacing and shifts the VBM to deeper levels with a slope of-16.2meV/％strain.Conversely,the tensile strain along the zigzag direction compresses the interlayer spacing and causes the VBM to shift towards shallower levels with a slope of 13.1 meV/％strain.This work demonstrates an effective method for band engineering of bulk BP by uniaxial tensile strain,elucidates the mechanism behind it,and paves the way for strain-regulated optoelectronic devices based on bulk BP.
维普
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