首页|Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain
Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
万方数据
维普
We investigate the anisotropic band structure and its evolution under tensile strains along different crystal-lographic directions in bulk black phosphorus(BP)using angle-resolved photoemission spectroscopy and density functional theory.The results show that there are band crossings in the Z-L(armchair)direction,but not in the Z-A(zigzag)direction.The corresponding dispersion-k distributions near the valence band maximum(VBM)exhibit quasi-linear or quadratic relationships,respectively.Along the armchair direction,the tensile strain expands the interlayer spacing and shifts the VBM to deeper levels with a slope of-16.2meV/％strain.Conversely,the tensile strain along the zigzag direction compresses the interlayer spacing and causes the VBM to shift towards shallower levels with a slope of 13.1 meV/％strain.This work demonstrates an effective method for band engineering of bulk BP by uniaxial tensile strain,elucidates the mechanism behind it,and paves the way for strain-regulated optoelectronic devices based on bulk BP.
邓亚丰、张艺琳、赵亚飞、徐永康、代兴泽、王双海、陆显扬、黎遥、徐永兵、何亮
展开 >
National Key Laboratory of Spin Chip and Technology,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China
College of Optical and Electronic Technology,China Jiliang University,Hangzhou 310018,China
School of Physics and Engineering,Henan University of Science and Technology,Luoyang 471023,China
万方数据
维普
