Abstract
SnO2 films exhibit significant potential as cost-effective and high electron mobility substitutes for In2O3 films.In this study,Li is incorporated into the interstitial site of the SnO2 lattice resulting in an exceptionally low resistivity of 2.028 × 10-3 Ω·cm along with a high carrier concentration of 1.398 × 1020 cm-3 and carrier mobility of 22.02 cm2/V·s.Intriguingly,Lii readily forms in amorphous structures but faces challenges in crystalline formations.Furthermore,it has been experimentally confirmed that Lii acts as a shallow donor in SnO2 with an ionization energy ΔED1 of-0.4 eV,indicating spontaneous occurrence of Lii ionization.
基金项目
Key-Area Research and Development Program of Guangdong Province(2021B0101260001)
Guangdong Basic and Applied Basic Research Foundation(2019A1515110411)
INT-PART Program at the Research Council of Norway(322382)
万方数据