首页|Interstitial Doping of SnO2 Film with Li for Indium-Free Transparent Conductor

Interstitial Doping of SnO2 Film with Li for Indium-Free Transparent Conductor

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SnO2 films exhibit significant potential as cost-effective and high electron mobility substitutes for In2O3 films.In this study,Li is incorporated into the interstitial site of the SnO2 lattice resulting in an exceptionally low resistivity of 2.028 × 10-3 Ω·cm along with a high carrier concentration of 1.398 × 1020 cm-3 and carrier mobility of 22.02 cm2/V·s.Intriguingly,Lii readily forms in amorphous structures but faces challenges in crystalline formations.Furthermore,it has been experimentally confirmed that Lii acts as a shallow donor in SnO2 with an ionization energy ΔED1 of-0.4 eV,indicating spontaneous occurrence of Lii ionization.

陈兴谦、李昊臻、陈伟、梅增霞、Alexander Azarov、Andrej Kuznetsov、杜小龙

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Beijing National Laboratory for Condensed Matter Physics,and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

Songshan Lake Materials Laboratory,Dongguan 523808,China

School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China

Guangdong SinoPrime Technology Co.,Ltd.,Dongguan 523808,China

Department of Physics,Centre for Materials Science and Nanotechnology,University of Oslo,P.O.Box 1048,Blindern,N-0316 Oslo,Norway

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Key-Area Research and Development Program of Guangdong ProvinceGuangdong Basic and Applied Basic Research FoundationINT-PART Program at the Research Council of Norway

2021B01012600012019A1515110411322382

2024

10.1088/0256-307X/41/3/037305

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子：0.515
ISSN：0256-307X
年,卷(期)：2024.41(3)
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