首页|Hard Superconducting Gap in PbTe Nanowires

Hard Superconducting Gap in PbTe Nanowires

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Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits.The performance of these quantum devices heavily relies on the quality of the induced superconducting gap.A hard gap,evident as vanishing subgap conductance in tunneling spectroscopy,is both necessary and desired.A hard gap has been achieved and extensively studied before in Ⅲ-Ⅴ semiconductor nanowires(InAs and InSb).In this study,we present the observation of a hard superconducting gap in PbTe nanowires coupled to a superconductor Pb.The gap size Δ is~1 meV(maximally 1.3meV in one device).Additionally,subgap Andreev bound states can also be created and controlled through gate tuning.Tuning a device into the open regime can reveal Andreev enhancement of the subgap conductance.These results pave the way for diverse superconducting quantum devices based on PbTe nanowires.

高益淳、宋文玉、杨帅、于泽昊、李睿东、苗文韬、王禹灏、陈芳婷、耿祖汗、杨利宁、夏泽洲、冯硝、臧运祎、李琳、尚汝南、薛其坤、何珂、张浩

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State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China

Beijing Academy of Quantum Information Sciences,Beijing 100193,China

Frontier Science Center for Quantum Information,Beijing 100084,China

Hefei National Laboratory,Hefei 230088,China

Southern University of Science and Technology,Shenzhen 518055,China

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清华大学自主科研项目国家自然科学基金Innovation Program for Quantum Science and TechnologyNational Postdoctoral Researcher Program of China

920652062021ZD0302400GZC20231368

2024

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子:0.515
ISSN:0256-307X
年,卷(期):2024.41(3)
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