首页|Tuning Second Chern Number in a Four-Dimensional Topological Insulator by High-Frequency Time-Periodic Driving

Tuning Second Chern Number in a Four-Dimensional Topological Insulator by High-Frequency Time-Periodic Driving

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Floquet engineering has attracted considerable attention as a promising approach for tuning topological phase transitions.We investigate the effects of high-frequency time-periodic driving in a four-dimensional(4D)topological insulator,focusing on topological phase transitions at the off-resonant quasienergy gap.The 4D topological insulator hosts gapless three-dimensional boundary states,characterized by the second Chern number C2.We demonstrate that the second Chern number of 4D topological insulators can be modulated by tuning the amplitude of time-periodic driving.This includes transitions from a topological phase with C2=±3 to another topological phase with C2=±1,or to a topological phase with an even second Chern number C2=±2,which is absent in the 4D static system.Finally,the approximation theory in the high-frequency limit further confirms the numerical conclusions.

刘峥嵘、陈锐、周斌

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Department of Physics,Hubei University,Wuhan 430062,China

Key Laboratory of Intelligent Sensing System and Security of Ministry of Education,Hubei University,Wuhan 430062,China

国家自然科学基金国家自然科学基金Program of Outstanding Young and Middle-Aged Scientific and Technological Innovation Team of Colleges and Universities in HuInnovation Group Project of the Natural Science Foundation of Hubei Province of ChinaChutian Scholars Program in Hubei ProvincePostdoctoral Fellowship Program of CPSFPostdoctoral Innovation Research Program in Hubei Province

1207410712304195T20200012022CFA012GZC20230751351342

2024

10.1088/0256-307X/41/4/047102

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子：0.515
ISSN：0256-307X
年,卷(期)：2024.41(4)
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