首页|Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn3Pt
Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn3Pt
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In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Re-cently discovered spin-splitting noncollinear antiferromagnets,such as Mn3Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling mag-netoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800％in Mn3Pt/perovskite oxides/Mn3Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn3Pt thin film un-der magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.
朱蒙、董建艇、李新录、郑凡星、周晔、吴琨、张佳
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School of Physics and Wuhan National High Magnetic Field Center,Huazhong University of Science and Technology,Wuhan 430074,China
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