首页|Influence of High-Pressure Induced Lattice Dislocations and Distortions on Thermoelectric Performance of Pristine SnTe

Influence of High-Pressure Induced Lattice Dislocations and Distortions on Thermoelectric Performance of Pristine SnTe

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As a sister compound of PbTe,SnTe possesses the environmentally friendly elements.However,the pristine SnTe compounds suffer from the high carrier concentration,the large valence band offset between the L and ∑positions and high thermal conductivity.Using high-pressure and high-temperature technology,we synthesized the pristine SnTe samples at different pressures and systemically investigated their thermoelectric properties.High pressure induces rich microstructures,including the high-density dislocations and lattice distortions,which serve as the strong phonon scattering centers,thereby reducing the lattice thermal conductivity.For the elec-trical properties,pressure reduces the harmful high carrier concentration,due to the depression of Sn vacancies.Moreover,pressure induces the valence band convergence,reducing the energy separation between the L and ∑positions.The band convergence and suppressed carrier concentration increase the Seebeck coefficient.Thus,the power factors of pressure-sintered compounds do not deteriorate significantly under the condition of decreasing electrical conductivity.Ultimately,for a pristine SnTe compound synthesized at 5 GPa,a higher ZT value of 0.51 is achieved at 750 K,representing a 140％improvement compared to the value of 0.21 obtained using SPS.There-fore,the high-pressure and high-temperature technology is demonstrated as an effectively approach to optimize thermoelectric performance.

郑博文、陈涛、孙海瑞、杨曼曼、杨兵超、陈欣、张永胜、刘晓兵

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Laboratory of High-Pressure Physics and Materials Science(HPPMS),School of Physics and Physical Engineering,Qufu Normal University,Qufu 273165,China

Key Lab of Photovoltaic and Energy Conservation Materials Institute of Solid State Physics,HFIPS,Chinese Academy of Sciences,Hefei 230031,China

University of Science and Technology of China,Hefei 230026,China

Advanced Research Institute of Multidisciplinary Sciences,Qufu Normal University,Qufu 273165,China

School of Electronic Engineering Huainan Normal University,Huainan 232038,China

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国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金山东省自然科学基金山东省自然科学基金山东省自然科学基金Program of Distinguished Expert of Taishan Scholar

12374012119742085217221252002217ZR2023JQ001ZR2020YQ052019KJJ020tstp20221124

2024

10.1088/0256-307X/41/5/057301

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子：0.515
ISSN：0256-307X
年,卷(期)：2024.41(5)
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