首页|Quantum Anomalous Hall Effect with Tunable Chern Numbers in High-Temperature 1T-PrN2 Monolayer
Quantum Anomalous Hall Effect with Tunable Chern Numbers in High-Temperature 1T-PrN2 Monolayer
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Quantum anomalous Hall(QAH)insulators have highly potential applications in spintronic device.However,available candidates with tunable Chern numbers and high working temperature are quite rare.Here,we predict a 1T-PrN2 monolayer as a stable QAH insulator with high magnetic transition temperature of above 600 K and tunable high Chern numbers of C=±3 from first-principles calculations.Without spin-orbit coupling(SOC),the 1T-PrN2 monolayer is predicted to be a p-state Dirac half metal with high Fermi velocity.Rich topological phases depending on magnetization directions can be found when the SOC is considered.The QAH effect with periodical changes of Chern number(±1)can be produced when the magnetic moment breaks all twofold rotational symmetries in the xy plane.The critical state can be identified as Weyl half semimetals.When the magnetization direction is parallel to the z-axis,the system exhibits high Chern number QAH effect with C=±3.Our work provides a new material for exploring novel QAH effect and developing high-performance topological devices.
吴绪才、李树宗、司君山、黄博、张卫兵
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Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering,School of Physics and Electronic Sciences,Changsha University of Science and Technology,Changsha 410114,China
国家自然科学基金Fok YingTong Education Foundation,ChinaScience Fund for Distinguished Young Scholars of Hunan Province
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