首页|Hole-Doped Nonvolatile and Electrically Controllable Magnetism in van der Waals Ferroelectric Heterostructures
Hole-Doped Nonvolatile and Electrically Controllable Magnetism in van der Waals Ferroelectric Heterostructures
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Electrical control of magnetism in van der Waals semiconductors is a promising step towards development of two-dimensional spintronic devices with ultralow power consumption for processing and storing information.Here,we propose a design for two-dimensional van der Waals heterostructures(vdWHs)that can host ferroelec-tricity and ferromagnetism simultaneously under hole doping.By contacting an InSe monolayer and forming an InSe/In2Se3 vdWH,the switchable built-in electric field from the reversible out-of-plane polarization enables robust control of the band alignment.Furthermore,switching between the two ferroelectric states(P↑ and P↓)of hole-doped In2Se3 with an external electric field can interchange the ON and OFF states of the nonvolatile magnetism.More interestingly,doping concentration and strain can effectively tune the magnetic moment and polarization energy.Therefore,this provides a platform for realizing multiferroics in ferroelectric heterostructures,showing great potential for use in nonvolatile memories and ferroelectric field-effect transistors.
姜新新、王智宽、李冲、孙雪莲、杨磊、李冬梅、崔彬、刘德胜
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School of Physics,National Demonstration Center for Experimental Physics Education,Shandong University,Jinan 250100,China
School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China
山东省自然科学基金山东省自然科学基金山东省自然科学基金Major Basic Research Project of Shandong Province
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