首页|Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized L10-MnAl/B2-CoGa Bilayer
Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized L10-MnAl/B2-CoGa Bilayer
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Rare-earth-free Mn-based binary alloy L10-MnAl with bulk perpendicular magnetic anisotropy(PMA)holds promise for high-performance magnetic random access memory(MRAM)devices driven by spin-orbit torque(SOT).However,the lattice-mismatch issue makes it challenging to place conventional spin current sources,such as heavy metals,between L10-MnAl layers and substrates.In this work,we propose a solution by using the B2-CoGa alloy as the spin current source.The lattice-matching enables high-quality epitaxial growth of 2-nm-thick L10-MnAl on B2-CoGa,and the L10-MnAl exhibits a large PMA constant of 1.04 × 106 J/m3.Subsequently,the considerable spin Hall effect in B2-CoGa enables the achievement of SOT-induced deterministic magnetization switching.Moreover,we quantitatively determine the SOT efficiency in the bilayer.Furthermore,we design an L10-MnAl/B2-CoGa/Co2MnGa structure to achieve field-free magnetic switching.Our results provide valuable insights for achieving high-performance SOT-MRAM devices based on L10-MnAl alloy.
孙宏利、韩荣坤、秦红蕊、赵旭鹏、谢志成、魏大海、赵建华
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State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,China
International School of Microelectronics,Dongguan University of Technology,Dongguan 523808,China
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