首页|Photodoping-Modified Charge Density Wave Phase Transition in WS2/1T-TaS2 Heterostructure

Photodoping-Modified Charge Density Wave Phase Transition in WS2/1T-TaS2 Heterostructure

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Controlling collective electronic states hold great promise for development of innovative devices.Here,we experimentally detect the modification of the charge density wave(CDW)phase transition within a 1T-TaS2 layer in a WS2/1T-TaS2 heterostructure using time-resolved ultrafast spectroscopy.Laser-induced charge transfer doping strongly suppresses the commensurate CDW phase,which results in a significant decrease in both the phase transition temperature(Tc)and phase transition stiffness.We interpret the phenomenon that photo-induced hole doping,when surpassing a critical threshold value of~1018cm-3,sharply decreases the phase transition energy barrier.Our results provide new insights into controlling the CDW phase transition,paving the way for optical-controlled novel devices based on CDW materials.

王瑞、丁建伟、孙飞、赵继民、裘晓辉

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Beijing Information Technology College,Beijing 100015,China

CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing 100190,China

University of Chinese Academy of Sciences,Beijing 100049,China

Max Planck Institute for Chemical Physics of Solids,Dresden 01187,Germany

Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

Songshan Lake Materials Laboratory,Dongguan 523808,China

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国家重点研发计划CAS Project for Young Scientists in Basic Research北京市自然科学基金国家自然科学基金Scientific Instrument Developing Project of the Chinese Academy of Sciences中国科学院战略规划重点项目中国科学院战略规划重点项目International Partnership Program of Chinese Academy of Sciences中国科学院跨学科创新团队项目

2021YFA1400201YSBR-059419100311774408GJJSTD20200005XDB36000000XDB30000000GJHZ1826

2024

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子:0.515
ISSN:0256-307X
年,卷(期):2024.41(5)
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