首页|Layer-Valley Hall Effect under Inversion and Time-Reversal Symmetries

Layer-Valley Hall Effect under Inversion and Time-Reversal Symmetries

扫码查看
原文链接
  • 万方数据
  • 维普
Hall effects have been the central paradigms in modern physics,materials science and practical applications,and have led to many exciting breakthroughs,including the discovery of topological Chern invariants and the revolution of metrological resistance standard.To date,the Hall effects have mainly focused on a single degree of freedom(DoF),and most of them require the breaking of spatial-inversion and/or time-reversal symmetries.Here we demonstrate a new type of Hall effect,i.e.,layer-valley Hall effect,based on a combined layer-valley DoF characterized by the product of layer and valley indices.The layer-valley Hall effect has a quantum origin arising from the layer-valley contrasting Berry curvature,and can occur in nonmagnetic centrosymmetric crystals with both spatial-inversion and time-reversal symmetries,transcending the symmetry constraints of single DoF Hall effect based on the constituent layer or valley index.Moreover,the layer-valley Hall effect is highly tunable and shows a W-shaped pattern in response to the out-of-plane electric fields.Additionally,we discuss the potential detection approaches and material-specific design principles of layer-valley Hall effect.Our results demonstrate novel Hall physics and open up exotic paradigms for new research direction of layer-valleytronics that exploits the quantum nature of the coupled layer-valley DoF.

赵交交、刘贵斌、陈鹏、姚裕贵、张广宇、杜罗军

展开 >

Beijing National Laboratory for Condensed Matter Physics,and Key Laboratory for Nanoscale Physics and Devices,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China

Centre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,China

Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems,School of Physics,Beijing Institute of Technology,Beijing 100081,China

Schoolof Microelectronics,Southern University of Science and Technology,Shenzhen 518055,China

Songshan Lake Materials Laboratory,Dongguan 523808,China

展开 >

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaKey-Area Research and Development Program of Guangdong Province,ChinaGuangdong Major Project of Basic and Applied Basic ResearchStrategic Priority Research Program of Chinese Academy of sciences(CAS)

61888102122744472021YFA12029002023YFA14070002020B01013400012021B0301030002XDB0470101

2024

10.1088/0256-307X/41/6/066801

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子：0.515
ISSN：0256-307X
年,卷(期)：2024.41(6)