首页|Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

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In the era of Internet of Things(IoTs),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor hetero-structures or p-n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gate-drain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(IR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1V,decent UV response has been realized including large UV/visible(R300/R550)rejection ratio(1.9 × 103),low dark current(1.15 × 10-12 A)as well as high photo-to-dark current ratio(PDCR,～103)and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

宋双、梁会力、霍文星、张广、张永晖、王绩伟、梅增霞

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Songshan Lake Materials Laboratory,Dongguan 523808,China

College of Physics,Liaoning University,Shenyang 110036,China

Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

Department of Instruments Science and Technology,School of Precision Instrument and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China

National Key Laboratory of Scattering and Radiation,Beijing 100039,China

School of Physics and Optoelectronic Engineering,Shandong University of Technology,Zibo 255000,China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaGuangdong Basic and Applied Basic Research FoundationGuangdong Basic and Applied Basic Research FoundationGuangdong Basic and Applied Basic Research Foundation

6217411312174275618741392019B15151200572023A15151400942023A1515110730

2024

10.1088/0256-307X/41/6/068501

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子：0.515
ISSN：0256-307X
年,卷(期)：2024.41(6)