Impact of Quantum Coherence on Inelastic Thermoelectric Devices:From Diode to Transistor

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外文摘要：We present a study on inelastic thermoelectric devices,wherein charge currents and electronic and phononic heat currents are intricately interconnected.The employment of double quantum dots in conjunction with a phonon reservoir positions them as promising candidates for quantum thermoelectric diodes and transistors.We illustrate that quantum coherence yields significant charge and Seebeck rectification effects.It is worth noting that,while the thermal transistor effect is observable in the linear response regime,especially when phonon-assisted inelastic processes dominate the transport,quantum coherence does not enhance thermal amplification.Our work may provide valuable insights for the optimization of inelastic thermoelectric devices.

作者：

曹蓓、韩崇泽、郝翔、王晨、陆金成

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作者单位：

Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou 215009,China

Department of Physics,Zhejiang Normal University,Jinhua 321004,China

基金：

National Natural Science Foundation of ChinaJiangsu Key Disciplines of the Fourteenth Five-Year PlanNatural Science Foundation of Jiangsu Higher Education Institutions of ChinaOpening Project of Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology

项目编号：

12305050202113523KJB140017

出版年：

2024

DOI：

10.1088/0256-307X/41/7/077302

中国物理快报(英文版)

中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI

影响因子：0.515

ISSN：0256-307X

年,卷(期)：2024.41(7)