Planar Hall Effect in the Charge-Density-Wave Bi2Rh3Se2

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外文摘要：We systematically investigate in-plane transport properties of ternary chalcogenide Bi2Rh3Se2.Upon rotating the magnetic field within the plane of the sample,one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance,and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect(PHE).In addition,anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in Bi2Rh3Se2.The finding not only provides another platform for understanding the mechanism of PHE,but could also be beneficial for future planar Hall sensors based on two-dimensional materials.

作者：

蔡明桔、陈正、杨扬、朱相德、孙浩翔、朱安康、刘学、韩玉岩、高文帅、田明亮

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作者单位：

Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China

Anhui Key Laboratory of Low-energy Quantum Materials and Devices,High Magnetic Field Laboratory,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China

Stony Brook Institute at Anhui University,Anhui University,Hefei 230601,China

School of Mathematics and Physics,Bengbu University,Bengbu 233030,China

School of Physics and Optoelectronics Engineering,Anhui University,Hefei 230601,China

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基金：

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaExcellent Youth Project of Natural Science Foundation of Anhui Province

项目编号：

U19A209311904002120743722308085Y07

出版年：

2024

DOI：

10.1088/0256-307X/41/7/077303

中国物理快报(英文版)

中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI

影响因子：0.515

ISSN：0256-307X

年,卷(期)：2024.41(7)