首页|Excitonic Instability in Ta2Pd3Te5 Monolayer

Excitonic Instability in Ta2Pd3Te5 Monolayer

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By systematic theoretical calculations,we reveal an excitonic insulator(EI)in the Ta2Pd3Te5 monolayer.The bulk Ta2Pd3Te5 is a van der Waals(vdW)layered compound,whereas the vdW layer can be obtained through exfoliation or molecular-beam epitaxy.First-principles calculations show that the monolayer is a nearly zero-gap semiconductor with the modified Becke-Johnson functional.Due to the same symmetry of the band-edge states,the two-dimensional polarization α2D would be finite as the band gap goes to zero,allowing for an EI state in the compound.Using the first-principles many-body perturbation theory,the GW plus Bethe-Salpeter equation calculation reveals that the exciton binding energy is larger than the single-particle band gap,indicating the excitonic instability.The computed phonon spectrum suggests that the monolayer is dynamically stable without lattice distortion.Our findings suggest that the Ta2Pd3Te5 monolayer is an excitonic insulator without structural distortion.

Jingyu Yao、Haohao Sheng、Ruihan Zhang、Rongtian Pang、Jin-Jian Zhou、Quansheng Wu、Hongming Weng、Xi Dai、Zhong Fang、Zhijun Wang

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Beijing National Laboratory for Condensed Matter Physics,and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

University of Chinese Academy of Sciences,Beijing 100049,China

Centre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,China

Department of Physics,Hong Kong University of Science and Technology,Hong Kong 999077,China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaStrategic Priority Research Program of Chinese Academy of SciencesNational Key R&D Program of ChinaNational Key R&D Program of ChinaCenter for Materials Genome

1197439512188101XDB330000002022YFA14038002022YFA1403400

2024

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子:0.515
ISSN:0256-307X
年,卷(期):2024.41(9)