首页|Carrier-Density-Determined Magnetoresistance in Semimetal SrIrO3
Carrier-Density-Determined Magnetoresistance in Semimetal SrIrO3
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SrIrO3,a Dirac material with a strong spin-orbit coupling(SOC),is a platform for studying topological properties in strongly correlated systems,where its band structure can be modulated by multiple factors,such as crystal symmetry,elements doping,oxygen vacancies,magnetic field,and temperature.Here,we find that the engineered carrier density plays a critical role on the magnetoelectric transport properties of the topological semimetal SrIrO3.The decrease of carrier density subdues the weak localization and the associated negative magnetoresistance,while enhancing the SOC-induced weak anti-localization.Notably,the sample with the lowest carrier density exhibits high-field positive magnetoresistance,suggesting the presence of a Dirac cone.In addition,the anisotropic magnetoresistance indicates the anisotropy of the electronic structure near the Fermi level.The engineering of carrier density provides a general strategy to control the Fermi surface and electronic structure in topological materials.
杨亮、武彪、刘鑫、王铭宇、何聪丽、王守国、张金星
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School of Physics and Astronomy,Beijing Normal University,Beijing 100875,China
Key Laboratory of Multiscale Spin Physics(Ministry of Education),Beijing Normal University,Beijing 100875,China
Anhui Key Laboratory of Magnetic Functional Materials and Devices,School of Materials Science and Engineering,Anhui University,Hefei 230601,China
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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational science Fund for Distinguished Young ScholarsNational Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaFundamental Research Funds for the Central Universities
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