首页|A Simple Urea Approach to N-Doped α-Mo2C with Enhanced Superconductivity

A Simple Urea Approach to N-Doped α-Mo2C with Enhanced Superconductivity

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Chemical doping is a critical factor in the development of new superconductors or optimizing the supercon-ducting transition temperature(Tc)of the parent superconducting materials.Here,a new simple urea approach is developed to synthesize the N-doped α-Mo2C.Benefiting from the simple urea method,a broad superconducting dome is found in the Mo2C1-xNx(0 ≤ x ≤ 0.49)compositions.X-ray diffraction results show that the structure of α-Mo2C remains unchanged and there is a variation of lattice parameters with nitrogen doping.Resistiv-ity,magnetic susceptibility,and heat capacity measurement results confirm that Tc was strongly increased from 2.68K(x=0)to 7.05K(x=0.49).First-principles calculations and our analysis indicate that increasing nitro-gen doping leads to a rise in the density of states at the Fermi level and doping-induced phonon softening,which enhances electron-phonon coupling.This results in an increase in Tc and a sharp rise in the upper critical field.Our findings provide a promising strategy for fabricating transition metal carbonitrides and provide a material platform for further study of the superconductivity of transition metal carbides.

李龙夫、石磊、曾令勇、李宽、余沛峰、王康旺、张超、陈睿、项载琛、张云蔚、罗惠霞

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School of Materials Science and Engineering,State Key Laboratory of Optoelectronic Materials and Technologies,Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,Key Lab of Polymer Composite & Functional Materials,Sun Yat-Sen University,Guangzhou 510275,China

School of Physics,Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,Sun Yat-Sen University,Guangzhou 510275,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaGuangdong Basic and Applied Basic Research FoundationKey Research & Development Program of Guangdong Province,ChinaGuangdong Provincial Key Laboratory of Magnetoelectric Physics and DevicesPostdoctoral Fellowship Program of CPSFFundamental Research Funds for the Central Universities,Sun Yat-Sen University

12274471119224152022A15150111682019B1102090032022B1212010008GZC2023329929000-31610058

2024

10.1088/0256-307X/41/10/107401

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子：0.515
ISSN：0256-307X
年,卷(期)：2024.41(10)