Large Tunneling Magnetoresistance and Perfect Spin Filtering Effect in van der Waals Cu/FeX2/h-BN/FeX2/Cu(X=Cl,Br,I)Magnetic Tunnel Junctions

董新龙 ¹师小文 ²乔丹 ²李泽宇 ³白宇浩 ²乔振华 ⁴许小红⁵

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作者信息

1. College of Physics and Information Engineering,Shanxi Normal University,Taiyuan 030031,China;Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education,Research Institute of Materials Science,Shanxi Normal University,Taiyuan 030031,China;International Center for Quantum Design of Functional Materials,University of Science and Technology of China,Hefei 230026,China
2. College of Physics and Information Engineering,Shanxi Normal University,Taiyuan 030031,China;Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education,Research Institute of Materials Science,Shanxi Normal University,Taiyuan 030031,China
3. International Center for Quantum Design of Functional Materials,University of Science and Technology of China,Hefei 230026,China
4. International Center for Quantum Design of Functional Materials,University of Science and Technology of China,Hefei 230026,China;Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China
5. Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education,Research Institute of Materials Science,Shanxi Normal University,Taiyuan 030031,China
折叠

Abstract

The two-dimensional magnetic van der Waals heterojunctions have opened unprecedented opportunities to explore new physics due to their potential for spintronic applications.Here,combing density functional the-ory with non-equilibrium Green's function technique,we systematically investigate the spin-polarized trans-port properties of Cu/FeX2/h-BN/FeX2/Cu(X=Cl,Br,I)magnetic tunnel junctions(MTJs).It is found that the maximum tunneling magnetoresistance of Cu/FeCl2/h-BN/FeCl2/Cu,Cu/FeBr2/h-BN/FeBr2/Cu,and Cu/FeI2/h-BN/FeI2/Cu MTJs can reach 3443％,3069％,and 1676％,respectively.In the parallel state,the re-sistance area products at zero bias for Cu/FeCl2/h-BN/FeCl2/Cu,Cu/FeBr2/h-BN/FeBr2/Cu,and Cu/FeI2/h-BN/FeI2/Cu MTJs are 0.92,0.47,and 0.32Ω·μm2,respectively.More interestingly,our results indicate that Cu/FeX2/h-BN/FeX2/Cu(X=Cl,Br,I)MTJs can realize spin filtering effect,while Cu/FeCl2/h-BN/FeCl2/Cu and Cu/FeI2/h-BN/FeI2/Cu MTJs exhibit negative differential resistance.Our results demonstrate that large tunneling magnetoresistance,negative differential resistance effect,low resistance area product as well as excellent spin filtering effect coexist in Cu/FeCl2/h-BN/FeCl2/Cu and Cu/FeI2/h-BN/FeI2/Cu MTJs,and that the feasi-ble tunability of such a kind of van der Waals magnetic tunnel junctions is beneficial to designing next-generation logic devices.

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基金项目

National Key Research and Development Program of China(2022YFB3505301)

Natural Science Basic Research Program of Shanxi(20210302124252)

Innovation Project For Teaching Reform of Shanxi(J20230616)

出版年

2024

中国物理快报(英文版)

中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDCSCDEI

影响因子：0.515

ISSN：0256-307X

参考文献量63

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