Centimeter-Scale Above-Room-Temperature Ferromagnetic Fe3GaTe2 Thin Films by Molecular Beam Epitaxy

王太坤 ¹徐永康 ¹刘宇 ¹代兴泽 ¹闫鹏飞 ¹王瑾 ¹王双海 ¹邓亚丰 ¹何坤 ¹李彩涛 ¹王子昂 ²邹文琴 ³温荣吉 ⁴郝玉峰 ⁴何亮¹

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作者信息

1. School of Electronic Science and Engineering,Nanjing University,Nanjing 210000,China;National Key Laboratory of Spintronics,Nanjing University,Suzhou 215163,China
2. School of Electronic Science and Engineering,Nanjing University,Nanjing 210000,China
3. Department of Physics,Nanjing University,Nanjing 210000,China
4. College of Engineering and Applied Science,Nanjing University,Nanjing 210000,China
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Abstract

Fe3GaTe2,as a layered ferromagnetic material,has a Curie temperature(Tc)higher than room temperature,making it the key material in next-generation spintronic devices.To be used in practical devices,large-sized high-quality Fe3GaTe2 thin films need to be prepared.Here,the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology.Furthermore,the Tc of the samples raises as the film thickness increases,and reaches 367 K when the film thickness is 60 nm.This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe3GaTe2.

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基金项目

National Natural Science Foundation of China(12241403)

Natural Science Foundation of Jiangsu Province of China(BK20140054)

出版年

2024

中国物理快报(英文版)

中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDCSCDEI

影响因子：0.515

ISSN：0256-307X

参考文献量22

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