首页|Ultralow-Temperature Heat Transport Evidence for Residual Density of States in the Superconducting State of CsV3Sb5

Ultralow-Temperature Heat Transport Evidence for Residual Density of States in the Superconducting State of CsV3Sb5

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V-based kagome superconductors AV3Sb5(A=K,Rb,and Cs)host a charge density wave(CDW)and a topological nontrivial band structure,thereby providing a great platform to study the interplay of supercon-ductivity(SC),CDW,frustration,and topology.Here,we report ultralow-temperature thermal conductivity measurements of CsV3Sb5 and Ta-doped Cs(V0.86Ta0.14)3Sb5 and scanning tunneling microscopy(STM)mea-surements of CsV3Sb5.The finite residual linear term of thermal conductivity at zero magnetic field suggests the existence of a residual density of states(DOS)in the superconducting state of CsV3Sb5.This is supported by the observation of non-zero conductance at zero bias in STM spectrum at an electronic temperature of 90 mK.However,in Cs(V0.86Ta0.14)3Sb5,which does not have CDW order,there is no evidence for the residual DOS.These results show the importance of CDW order for the residual DOS,and that a nodal s-wave gap or residual Fermi arc may be the origin of the residual DOS in such an unusual multiband kagome superconductor,CsV3Sb5.

赵成成、王临舒、夏威、殷蔷薇、邓翰宾、刘国威、刘锦锦、张旭、倪佳敏、黄烨煜、涂成鹏、陶咨成、涂志俊、龚春生、王秩伟、雷和畅、郭艳峰、杨小帆、殷嘉鑫、李世燕

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State Key Laboratory of Surface Physics,Department of Physics,Fudan University,Shanghai 200438,China

Shanghai Research Center for Quantum Sciences,Shanghai 201315,China

School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China

ShanghaiTech Laboratory for Topological Physics,Shanghai 201210,China

Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices,Renmin University of China,Beijing 100872,China

Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China

Center for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,China

Shanghai Branch,Hefei National Laboratory,Shanghai 201315,China

Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China

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2024

中国物理快报(英文版)
中国科学院物理研究所,中国物理学会

中国物理快报(英文版)

CSTPCDEI
影响因子:0.515
ISSN:0256-307X
年,卷(期):2024.41(12)