首页|h-BN-assisted Metal Contact Transfer to InSe for Two-Dimensional Multifunctional Electronic Devices
h-BN-assisted Metal Contact Transfer to InSe for Two-Dimensional Multifunctional Electronic Devices
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Metal contacts to two-dimensional(2D)semiconductors are crucial for determining the electrical performance of electronic devices.However,traditional three-dimensional metal deposition processes cause damage to 2D semiconductors and considerable Fermi-level-pinning effects.In this study,a hexagonal boron nitride(h-BN)-assisted transfer method was proposed for transferring metal contacts to few-layered InSe for fabricating 2D functional electronic devices.Using the transferred Pt electrodes as the contact,p-type dominated ambipolar conduction behavior with the hole Schottky barrier height(SBH)approaching 0 meV was observed in field-effect transistors(FETs)comprising multilayered InSe.Based on this phenomenon,several InSe homojunctions were fabricated using a dual-gate modulating method such as p-p,n-n,p-n,and n-p.For InSe p-n homojunctions,a current rectification ratio of over 104 and optoelectronic detection capabilities were achieved.Furthermore,a complementary metal-oxide-semiconductor(CMOS)inverter with an ultra-high voltage gain exceeding 60 at VDD=-1V was fabricated.The proposed h-BN-assisted metal contact transfer method can be easily extended to other 2D semiconductors for fabricating complementary electronic and optoelectronic devices.
尉驰俊、努尔泰·加孜拉、刘轩冶、宋鹏、高辉、孙杰群、鲍丽宏、林晓、高鸿钧
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School of Physical Sciences and CAS Key Laboratory of Vacuum Physics,University of Chinese Academy of Sciences,Beijing 100190,China
Beijing National Center for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China
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