Abstract
Metal contacts to two-dimensional(2D)semiconductors are crucial for determining the electrical performance of electronic devices.However,traditional three-dimensional metal deposition processes cause damage to 2D semiconductors and considerable Fermi-level-pinning effects.In this study,a hexagonal boron nitride(h-BN)-assisted transfer method was proposed for transferring metal contacts to few-layered InSe for fabricating 2D functional electronic devices.Using the transferred Pt electrodes as the contact,p-type dominated ambipolar conduction behavior with the hole Schottky barrier height(SBH)approaching 0 meV was observed in field-effect transistors(FETs)comprising multilayered InSe.Based on this phenomenon,several InSe homojunctions were fabricated using a dual-gate modulating method such as p-p,n-n,p-n,and n-p.For InSe p-n homojunctions,a current rectification ratio of over 104 and optoelectronic detection capabilities were achieved.Furthermore,a complementary metal-oxide-semiconductor(CMOS)inverter with an ultra-high voltage gain exceeding 60 at VDD=-1V was fabricated.The proposed h-BN-assisted metal contact transfer method can be easily extended to other 2D semiconductors for fabricating complementary electronic and optoelectronic devices.
维普
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